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Microsemi ITC1100 RF BJT

ITC1100 by Microsemi · RF BJT · 55SW

In StockMicrosemi55SW
ITC1100 55SW package illustration

Same model may have multiple batches, images only for reference.

ITC1100
Manufacturer
Part Number (MPN)
ITC1100
Package
55SW
Lifecycle Status
Obsolete
Datasheet
PDF ITC1100 Datasheet
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Technical Specifications

Microsemi ITC1100 RF BJT technical specifications.

General

Package / Case
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
80 A
Dc Current Gain Hfe Min IC Vce
10 @ 5A, 5V
Frequency Transition
1.03 GHz
Gain
10dB ~ 10.5dB
Power Max
3400 W
Technology
Si

Alternate Parts Comparison (ITC1100 vs MS2201 vs SD1224 vs SD1332-05C)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseBulkM220M135M150
Mounting TypeChassis MountChassis MountChassis MountSurface Mount
Operating Temperature200°C (TJ)200°C (TJ)200°C (TJ)200°C
Current Collector IC Max80 A250mA5A30A
Dc Current Gain Hfe Min IC Vce10 @ 5A, 5V0.95 @ 10mA, 5V20 @ 500mA, 5V50 @ 14mA, 10V
Frequency Transition1.03 GHz1.025GHz ~ 1.15GHz175MHz5.5GHz
Gain10dB ~ 10.5dB9dB7.6dB17dB
Power Max3400 W10W60W180W
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max65 V45V35V15V
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More Parts in RF BJT

Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.