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Microsemi 2N5179 RF BJT

2N5179 by Microsemi · RF BJT · TO-72

In StockMicrosemiTO-72
2N5179 TO-72 package illustration

Same model may have multiple batches, images only for reference.

2N5179
Manufacturer
Part Number (MPN)
2N5179
Package
TO-72
Lifecycle Status
Obsolete
Datasheet
PDF 2N5179 Datasheet
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Technical Specifications

Microsemi 2N5179 RF BJT technical specifications.

General

RoHS
No
Number of Pins
4
Package / Case
Bulk
Mounting Type
Through Hole
Lifecycle Status
Obsolete
Collector Base Voltage Vcbo
20 V
Collector Emitter Breakdown Voltage
12 V
Collector Emitter Voltage Vceo
12 V
Current Collector IC Max
50 mA
Dc Current Gain Hfe Min IC Vce
25 @ 3mA, 1V

Related Parts Comparison (2N5179 vs MS2201 vs SD1224 vs SD1332-05C)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseBulkM220M135M150
Mounting TypeThrough HoleChassis MountChassis MountSurface Mount
Current Collector IC Max50 mA250mA5A30A
Dc Current Gain Hfe Min IC Vce25 @ 3mA, 1V0.95 @ 10mA, 5V20 @ 500mA, 5V50 @ 14mA, 10V
Frequency Transition200 MHz1.025GHz ~ 1.15GHz175MHz5.5GHz
Gain20dB9dB7.6dB17dB
Power Max300 mW10W60W180W
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max12 V45V35V15V
RoHSNoYesYes--
Operating Temperature--200°C (TJ)200°C (TJ)200°C
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