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Microsemi 2N5179 RF BJT

2N5179 by Microsemi · RF BJT · TO-72

In StockMicrosemiTO-72
2N5179 TO-72 package illustration

Same model may have multiple batches, images only for reference.

2N5179
Manufacturer
Part Number (MPN)
2N5179
Package
TO-72
Lifecycle Status
Obsolete
Datasheet
PDF 2N5179 Datasheet
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Technical Specifications

Microsemi 2N5179 RF BJT technical specifications.

General

RoHS
No
Number of Pins
4
Package / Case
Bulk
Mounting Type
Through Hole
Lifecycle Status
Obsolete
Collector Base Voltage Vcbo
20 V
Collector Emitter Breakdown Voltage
12 V
Collector Emitter Voltage Vceo
12 V
Current Collector IC Max
50 mA
Dc Current Gain Hfe Min IC Vce
25 @ 3mA, 1V

Alternate Parts Comparison (2N5179 vs MS2201 vs SD1224 vs SD1332-05C)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseBulkM220M135M150
Mounting TypeThrough HoleChassis MountChassis MountSurface Mount
Current Collector IC Max50 mA250mA5A30A
Dc Current Gain Hfe Min IC Vce25 @ 3mA, 1V0.95 @ 10mA, 5V20 @ 500mA, 5V50 @ 14mA, 10V
Frequency Transition200 MHz1.025GHz ~ 1.15GHz175MHz5.5GHz
Gain20dB9dB7.6dB17dB
Power Max300 mW10W60W180W
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max12 V45V35V15V
RoHSNoYesYes--
Operating Temperature--200°C (TJ)200°C (TJ)200°C
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