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Microsemi 2N4957 RF BJT

2N4957 by Microsemi · RF BJT · TO-72

In StockMicrosemiTO-72
2N4957 TO-72 package illustration

Same model may have multiple batches, images only for reference.

2N4957
Manufacturer
Part Number (MPN)
2N4957
Package
TO-72
Lifecycle Status
Obsolete
Datasheet
PDF 2N4957 Datasheet
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Technical Specifications

Microsemi 2N4957 RF BJT technical specifications.

General

RoHS
Non-Compliant
Package / Case
Bulk
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
30 mA
Dc Current Gain Hfe Min IC Vce
30 @ 5mA, 10V
Gain
25dB
Noise Figure Db Typ F
3.5dB @ 450MHz
Power Max
200 mW

Alternate Parts Comparison (2N4957 vs MS2201 vs SD1224 vs SD1332-05C)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseBulkM220M135M150
Mounting TypeThrough HoleChassis MountChassis MountSurface Mount
Operating Temperature-65°C ~ 200°C (TJ)200°C (TJ)200°C (TJ)200°C
Current Collector IC Max30 mA250mA5A30A
Dc Current Gain Hfe Min IC Vce30 @ 5mA, 10V0.95 @ 10mA, 5V20 @ 500mA, 5V50 @ 14mA, 10V
Gain25dB9dB7.6dB17dB
Power Max200 mW10W60W180W
Transistor TypePNPNPNNPNNPN
Voltage Collector Emitter Breakdown Max30 V45V35V15V
RoHSNon-CompliantYesYes--
Frequency Transition--1.025GHz ~ 1.15GHz175MHz5.5GHz
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