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Microsemi 1517-20M RF BJT

1517-20M by Microsemi · RF BJT · 55LV-1

In StockMicrosemi55LV-1
1517-20M 55LV-1 package illustration

Same model may have multiple batches, images only for reference.

1517-20M
Manufacturer
Part Number (MPN)
1517-20M
Package
55LV-1
Lifecycle Status
Obsolete
Datasheet
PDF 1517-20M Datasheet
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Technical Specifications

Microsemi 1517-20M RF BJT technical specifications.

General

Package / Case
Bulk
Mounting Type
Chassis Mount
Lifecycle Status
Obsolete
Current Collector IC Max
3 A
Dc Current Gain Hfe Min IC Vce
20 @ 500mA, 5V
Frequency Transition
1.48GHz ~ 1.65GHz
Gain
7.6dB ~ 9.3dB
Power Max
175 W
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
65 V

Alternate Parts Comparison (1517-20M vs MS2201 vs SD1224 vs SD1332-05C)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseBulkM220M135M150
Mounting TypeChassis MountChassis MountChassis MountSurface Mount
Current Collector IC Max3 A250mA5A30A
Dc Current Gain Hfe Min IC Vce20 @ 500mA, 5V0.95 @ 10mA, 5V20 @ 500mA, 5V50 @ 14mA, 10V
Frequency Transition1.48GHz ~ 1.65GHz1.025GHz ~ 1.15GHz175MHz5.5GHz
Gain7.6dB ~ 9.3dB9dB7.6dB17dB
Power Max175 W10W60W180W
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max65 V45V35V15V
Operating Temperature--200°C (TJ)200°C (TJ)200°C
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