LAPIS Semiconductor MMST918T146 RF BJT
MMST918T146 by LAPIS Semiconductor · RF BJT · SOT23-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MMST918T146
Package
SOT23-3
Lifecycle Status
Active
Datasheet
MMST918T146 Datasheet
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Technical Specifications
LAPIS Semiconductor MMST918T146 RF BJT technical specifications.
General
RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
15V
Frequency Transition
600MHz
Noise Figure Db Typ F
6dB @ 60MHz
Gain
15dB
Power Max
200mW
Alternate Parts Comparison (MMST918T146 vs BFU520XVL vs BFP720ESDH6327 vs 2SC4618TLP)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 150°C (TJ) | -40°C ~ 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| RoHS | Yes | Yes | Yes | Yes |
| Current Collector IC Max | 50A | 30mA | 30mA | 50mA |
| Dc Current Gain Hfe Min IC Vce | 20 @ 3mA, 1V | 60 @ 5mA, 8V | 160 @ 15mA, 3V | 82 @ 1mA, 6V |
| Frequency Transition | 600MHz | 10.5GHz | 43GHz | 300MHz |
| Power Max | 200mW | 450mW | 100mW | 150mW |
| Transistor Type | NPN | NPN | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 15V | 12V | 4.7V | 25V |
| Lifecycle Status | Active | Active | Active | -- |
| Gain | 15dB | 18dB | 11dB ~ 30.5dB | -- |
| Noise Figure Db Typ F | 6dB @ 60MHz | 1.1dB @ 1.8GHz | 0.55dB ~ 1.55dB @ 150MHz ~ 10GHz | -- |
| Action |
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