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LAPIS Semiconductor 2SC4713KT146S RF BJT

2SC4713KT146S by LAPIS Semiconductor · RF BJT · SMT3

In Stock ActiveLAPIS SemiconductorSMT3
2SC4713KT146S SMT3 package illustration

Same model may have multiple batches, images only for reference.

2SC4713KT146S
Part Number (MPN)
2SC4713KT146S
Package
SMT3
Lifecycle Status
Active
Datasheet
PDF 2SC4713KT146S Datasheet
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Technical Specifications

LAPIS Semiconductor 2SC4713KT146S RF BJT technical specifications.

General

Series
2SC4713K
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
+ 150°C
Transistor Polarity
NPN
Configuration
Single
Collector Emitter Voltage Vceo Max
6 V
Collector Base Voltage Vcbo
12 V
Emitter Base Voltage Vebo
3 V
Collector Emitter Saturation Voltage
300 mV

Alternate Parts Comparison (2SC4713KT146S vs BFU520XVL vs BFP720ESDH6327 vs 2SC4618TLP)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSMD/SMTSurface MountSurface MountSurface Mount
Operating Temperature+ 150°C-40°C ~ 150°C (TJ)150°C (TJ)150°C (TJ)
RoHSYesYesYesYes
PackageSMT3SOT143B--Tape & Reel (TR)
Package / Case--TO-253-4, TO-253AASC-82A, SOT-343SC-75, SOT-416
Current Collector IC Max--30mA30mA50mA
Dc Current Gain Hfe Min IC Vce--60 @ 5mA, 8V160 @ 15mA, 3V82 @ 1mA, 6V
Frequency Transition--10.5GHz43GHz300MHz
Power Max--450mW100mW150mW
Transistor Type--NPNNPNNPN
Voltage Collector Emitter Breakdown Max--12V4.7V25V
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