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LAPIS Semiconductor 2SC4618TLN RF BJT

2SC4618TLN by LAPIS Semiconductor · RF BJT · SC-75, SOT-416

In Stock ActiveLAPIS SemiconductorSC-75, SOT-416
2SC4618TLN SC-75, SOT-416 package illustration

Same model may have multiple batches, images only for reference.

2SC4618TLN
Part Number (MPN)
2SC4618TLN
Package
SC-75, SOT-416
Lifecycle Status
Active
Datasheet
PDF 2SC4618TLN Datasheet
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Technical Specifications

LAPIS Semiconductor 2SC4618TLN RF BJT technical specifications.

General

Series
2SC4618
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
+ 150°C
Transistor Polarity
NPN
Configuration
Single
Collector Emitter Voltage Vceo Max
25 V
Collector Base Voltage Vcbo
40 V
Emitter Base Voltage Vebo
5 V
Collector Emitter Saturation Voltage
100 mV

Alternate Parts Comparison (2SC4618TLN vs BFU520XVL vs BFP720ESDH6327 vs 2SC4618TLP)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSMD/SMTSurface MountSurface MountSurface Mount
Operating Temperature+ 150°C-40°C ~ 150°C (TJ)150°C (TJ)150°C (TJ)
RoHSYesYesYesYes
PackageSC-75, SOT-416SOT143B--Tape & Reel (TR)
Package / Case--TO-253-4, TO-253AASC-82A, SOT-343SC-75, SOT-416
Current Collector IC Max--30mA30mA50mA
Dc Current Gain Hfe Min IC Vce--60 @ 5mA, 8V160 @ 15mA, 3V82 @ 1mA, 6V
Frequency Transition--10.5GHz43GHz300MHz
Power Max--450mW100mW150mW
Transistor Type--NPNNPNNPN
Voltage Collector Emitter Breakdown Max--12V4.7V25V
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