Infineon Technologies BSC077N12NS3G MOSFETs
OptiMOS3 Power-Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSC077N12NS3G
Detailed Description
OptiMOS3 Power-Transistor
Package
PowerTDFN-8
Lifecycle Status
Active
Datasheet
BSC077N12NS3G Datasheet
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Technical Specifications
Infineon Technologies BSC077N12NS3G MOSFETs technical specifications.
General
RoHS
Yes
Idpuls Max
392.0 A
Ptot Max
139.0 W
Vds Max
120.0 V
Polarity
N
Rds on Max
7.7 mΩ
IC Max
98.0 A
Vgs Th Max
4.0 V
Vgs Th Min
2.0 V
Operating Temperature Max
150.0 °C
Alternate Parts Comparison (BSC077N12NS3G vs BSC010N04LS vs BSC016N03LSGATMA1 vs BSC016N06NS)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerTDFN-8 | TDSON-8 | PG-TDSON-8 | SuperSO8 |
| Feature AEC Qualified | -- | Yes | No | No |
| Feature Auto Motive | -- | Yes | No | No |
| Feature Cecc Qualified | -- | No | No | No |
| Feature Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| Feature Channel Type | -- | N | N | N |
| Feature Configuration | -- | Single Quad Drain Triple Source | Single Quad Drain Triple Source | Single Quad Drain Triple Source |
| Feature Maximum Continuous Drain Current a | -- | 38 | 32 | 30 |
| Feature Maximum Drain Source Resistance Mohm | -- | 1@10V | 1.6@10V | 1.6@10V |
| Feature Maximum Drain Source Voltage V | -- | 40 | 30 | 60 |
| Feature Maximum Gate Source Voltage V | -- | ±20 | ±20 | 20 |
| Action |
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