Infineon Technologies BSC883N03LSGATMA1 MOSFETs
MOSFET N-CH 34V 17A/98A TDSON
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSC883N03LSGATMA1
Detailed Description
MOSFET N-CH 34V 17A/98A TDSON
Package
PowerTDFN-8
Lifecycle Status
Active
Datasheet
BSC883N03LSGATMA1 Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies BSC883N03LSGATMA1 MOSFETs technical specifications.
General
RoHS
Yes
Feature Process Technology
OptiMOS
Feature Configuration
Single Quad Drain Triple Source
Feature Channel Mode
Enhancement
Feature Channel Type
N
Feature Number of Elements Per Chip
1
Feature Maximum Drain Source Voltage V
34
Feature Maximum Gate Source Voltage V
±20
Feature Maximum Continuous Drain Current a
17
Feature Maximum Drain Source Resistance Mohm
3.8@10V
Alternate Parts Comparison (BSC883N03LSGATMA1 vs BSC037N08NS5 vs BSC0504NSI vs BSC0501NSI)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerTDFN-8 | SUPERSO-8 | TDSON-8 | SuperSO8 |
| Mounting Type | -- | SMD | SMD | SMD |
| IC Max | -- | 131.0 A | 72.0 A | 130.0 A |
| Idpuls Max | -- | 524.0 A | 288.0 A | 520.0 A |
| Operating Temperature Max | -- | 150.0 °C | 150.0 °C | 150.0 °C |
| Operating Temperature Min | -- | -55.0 °C | -55.0 °C | -55.0 °C |
| Polarity | -- | N | N | N |
| Ptot Max | -- | 114.0 W | 30.0 W | 50.0 W |
| Rds on Max | -- | 3.7 mΩ | 4.7 mΩ | 2.4 mΩ |
| Rthja Max | -- | 50.0 K/W | 50.0 K/W | 50.0 K/W |
| Rthjc Max | -- | 1.1 K/W | 4.2 K/W | 2.5 K/W |
| Action |
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