Infineon Technologies BSC016N03LSGATMA1 MOSFETs
MOSFET N-CH 30V 32A/100A TDSON
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSC016N03LSGATMA1
Base Model
Detailed Description
MOSFET N-CH 30V 32A/100A TDSON
Package
PG-TDSON-8
Lifecycle Status
Active
Datasheet
BSC016N03LSGATMA1 Datasheet
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Technical Specifications
Infineon Technologies BSC016N03LSGATMA1 MOSFETs technical specifications.
General
RoHS
Yes
Lead Free
Yes
Halogen Free
Yes
Feature Process Technology
OptiMOS 3
Feature Configuration
Single Quad Drain Triple Source
Feature Channel Mode
Enhancement
Feature Channel Type
N
Feature Number of Elements Per Chip
1
Feature Maximum Drain Source Voltage V
30
Feature Maximum Gate Source Voltage V
±20
Alternate Parts Comparison (BSC016N03LSGATMA1 vs BSC016N06NSATMA1 vs BSC016N06NS vs BSC0902NSI)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PG-TDSON-8 | PG-TDSON-8 | SuperSO8 | PG-TDSON-8 |
| Feature AEC Qualified | No | -- | No | -- |
| Feature Auto Motive | No | -- | No | -- |
| Feature Cecc Qualified | No | -- | No | -- |
| Feature Channel Mode | Enhancement | -- | Enhancement | -- |
| Feature Channel Type | N | -- | N | -- |
| Feature Configuration | Single Quad Drain Triple Source | -- | Single Quad Drain Triple Source | -- |
| Feature Maximum Continuous Drain Current a | 32 | -- | 30 | -- |
| Feature Maximum Drain Source Resistance Mohm | 1.6@10V | -- | 1.6@10V | -- |
| Feature Maximum Drain Source Voltage V | 30 | -- | 60 | -- |
| Feature Maximum Gate Source Voltage V | ±20 | -- | 20 | -- |
| Action |
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