Infineon Technologies BSC016N06NS MOSFETs
Trans MOSFET N-CH 60V 31A 8-Pin TDSON EP T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSC016N06NS
Base Model
Detailed Description
Trans MOSFET N-CH 60V 31A 8-Pin TDSON EP T/R
Package
SuperSO8
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies BSC016N06NS MOSFETs technical specifications.
General
RoHS
Yes
Feature Process Technology
OptiMOS
Feature Configuration
Single Quad Drain Triple Source
Feature Channel Mode
Enhancement
Feature Channel Type
N
Feature Number of Elements Per Chip
1
Feature Maximum Drain Source Voltage V
60
Feature Maximum Gate Source Voltage V
20
Feature Maximum Gate Threshold Voltage V
3.3
Feature Maximum Continuous Drain Current a
30
Alternate Parts Comparison (BSC016N06NS vs BSC016N06NSATMA1 vs BSC016N03LSGATMA1 vs BSC030N08NS5)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SuperSO8 | PG-TDSON-8 | PG-TDSON-8 | SuperSO8 |
| Feature AEC Qualified | No | -- | No | -- |
| Feature Auto Motive | No | -- | No | -- |
| Feature Cecc Qualified | No | -- | No | -- |
| Feature Channel Mode | Enhancement | -- | Enhancement | -- |
| Feature Channel Type | N | -- | N | -- |
| Feature Configuration | Single Quad Drain Triple Source | -- | Single Quad Drain Triple Source | -- |
| Feature Maximum Continuous Drain Current a | 30 | -- | 32 | -- |
| Feature Maximum Drain Source Resistance Mohm | 1.6@10V | -- | 1.6@10V | -- |
| Feature Maximum Drain Source Voltage V | 60 | -- | 30 | -- |
| Feature Maximum Gate Source Voltage V | 20 | -- | ±20 | -- |
| Action |
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