Diodes Incorporated ZXMHC10A07T8TA MOSFETs
MOSFET 2N/2P-CH 100V 1A/0.8A SM8
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
ZXMHC10A07T8TA
Base Model
Detailed Description
MOSFET 2N/2P-CH 100V 1A/0.8A SM8
Package
SOT-223-8
Lifecycle Status
Active
Datasheet
ZXMHC10A07T8TA Datasheet
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Technical Specifications
Diodes Incorporated ZXMHC10A07T8TA MOSFETs technical specifications.
General
Series
ZXMHC10
RoHS
Yes
Number of Channels
4 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel, P-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
1.1 A
Rds on Drain Source Resistance
700 mOhms, 1 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (ZXMHC10A07T8TA vs ZXMHC10A07N8TC vs ZXMHC3A01T8TA vs ZXMHC3A01N8TC)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | ZXMHC10 | ZXMHC10 | ZXMHC3A | ZXMHC3 |
| Mounting Type | SMD/SMT | Surface Mount | SMD/SMT | SMD/SMT |
| Number of Channels | 4 Channel | 4 Channel | 4 Channel | 4 Channel |
| RoHS | Yes | Compliant | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Quad | 2 N and 2 P-Channel (Full Bridge) | Quad | Quad |
| Fall Time | 2.1 ns, 3.3 ns | 2.1 ns, 3.3 ns | 2.3 ns | 2.9 ns |
| Maximum Operating Temperature C | + 150 | 150 | + 150 | + 150 |
| Minimum Operating Temperature C | - 55 | -55 | - 55 | - 55 |
| Pd Power Dissipation | 1.3 W | 870 mW | 1.3 W | 10.9 mW |
| Qg Gate Charge | 2.9 nC, 3.5 nC | 2.9 nC, 3.5 nC | 3.9 nC, 2.6 nC | 3.9 nC, 5.2 nC |
| Rds on Drain Source Resistance | 700 mOhms, 1 Ohms | 700 mOhms, 1.45 Ohms | 180 mOhms, 330 mOhms | 180 mOhms, 330 mOhms |
| Action |
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