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Diodes Incorporated ZXMHC10A07N8TC MOSFETs

MOSFET 2N/2P-CH 100V 0.8A 8SO

1 ActiveDiodes IncorporatedZXMHC10A8-SOIC (0.154", 3.90mm Width)$1.58
ZXMHC10A07N8TC 8-SOIC (0.154", 3.90mm Width) package illustration

Same model may have multiple batches, images only for reference.

ZXMHC10A07N8TC
Part Number (MPN)
ZXMHC10A07N8TC
Base Model
Detailed Description
MOSFET 2N/2P-CH 100V 0.8A 8SO
Package
8-SOIC (0.154", 3.90mm Width)
Lifecycle Status
Active
Datasheet
PDF ZXMHC10A07N8TC Datasheet
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Ordering Code Family

ZXMHC10A groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated ZXMHC10A07N8TC MOSFETs technical specifications.

General

Series
ZXMHC10
RoHS
Compliant
Number of Pins
8
Number of Channels
4 Channel
Package / Case
8-SOIC
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Automotive
No
Channel Mode
Enhancement

Related Parts Comparison (ZXMHC10A07N8TC vs ZXMHC10A07T8TA vs ZXMC3A16DN8QTA vs DMN3007LSS-13)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSurface MountSMD/SMTSurface MountSurface Mount
RoHSCompliantYesCompliantROHS3 Compliant
TechnologyMOSFET (Metal Oxide)SiMOSFET (Metal Oxide)MOSFET (Metal Oxide)
Package / Case8-SOIC--8-SOIC8-SOIC
Operating Temperature-55°C ~ 150°C (TJ)---55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Number of Channels4 Channel4 Channel--1
Lifecycle StatusActive--ActiveActive
Configuration2 N and 2 P-Channel (Full Bridge)QuadN and P-Channel Complementary--
Current Continuous Drain ID 25 C800mA, 680mA--6.4A (Ta), 5.4A (Ta)16A (Ta)
Drain to Source Voltage Vdss100 V--30 V30 V
Fall Time2.1 ns, 3.3 ns2.1 ns, 3.3 ns--43.6 ns
Gate Charge Qg Max Vgs2.9nC @ 10V--17.5nC @ 10V, 24.9nC @ 10V64.2 nC @ 10 V
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