Diodes Incorporated ZXMHC3A01N8TC MOSFETs
MOSFET 2N/2P-CH 30V 2.17A 8SO
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
ZXMHC3A01N8TC
Detailed Description
MOSFET 2N/2P-CH 30V 2.17A 8SO
Package
8-SOIC
Lifecycle Status
Active
Datasheet
ZXMHC3A01N8TC Datasheet
Quick Jump:
Technical Specifications
Diodes Incorporated ZXMHC3A01N8TC MOSFETs technical specifications.
General
Series
ZXMHC3
RoHS
Yes
Number of Channels
4 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel, P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
2.72 A, 2.06 A
Rds on Drain Source Resistance
180 mOhms, 330 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (ZXMHC3A01N8TC vs ZXMHC10A07N8TC vs ZXMHC6A07T8TA vs ZXMHC3F381N8TC)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | ZXMHC3 | ZXMHC10 | ZXMHC6A | ZXMHC3 |
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | Surface Mount |
| Number of Channels | 4 Channel | 4 Channel | 4 Channel | 4 Channel |
| RoHS | Yes | Compliant | Compliant with Exemption | Compliant |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Quad | 2 N and 2 P-Channel (Full Bridge) | 2 N and 2 P-Channel (Full Bridge) | 2 N and 2 P-Channel (Full Bridge) |
| Fall Time | 2.9 ns | 2.1 ns, 3.3 ns | 2 ns, 5.8 ns | 6.3 ns, 21 ns |
| Maximum Operating Temperature C | + 150 | 150 | 150 | 150 |
| Minimum Operating Temperature C | - 55 | -55 | -55 | -55 |
| Pd Power Dissipation | 10.9 mW | 870 mW | 1.3 W | 870 mW |
| Qg Gate Charge | 3.9 nC, 5.2 nC | 2.9 nC, 3.5 nC | 3.2 nC, 5.1 nC | 9 nC, 12.7 nC |
| Rds on Drain Source Resistance | 180 mOhms, 330 mOhms | 700 mOhms, 1.45 Ohms | 300 mOhms, 425 mOhms | 33 mOhms, 55 mOhms |
| Action |
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