Diodes Incorporated DMTH10H017LPDQ-13 MOSFETs
MOSFET 2N-CH 100V 13A PWRDI50
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMTH10H017LPDQ-13
Base Model
Detailed Description
MOSFET 2N-CH 100V 13A PWRDI50
Package
PowerTDFN-8
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Diodes Incorporated DMTH10H017LPDQ-13 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 175°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
59 A
Rds on Drain Source Resistance
17.4 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (DMTH10H017LPDQ-13 vs DMTH10H010LPS-13 vs DMTH10H032LPDWQ-13 vs DMTH10H1M7STLWQ-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerTDFN-8 | PowerTDFN-8 | 8-PowerTDFN | POWERDI1012-8 |
| Mounting Type | SMD/SMT | -- | -- | -- |
| Operating Temperature | - 55°C ~ + 175°C | -- | -- | -- |
| Number of Channels | 2 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Dual | -- | -- | -- |
| Fall Time | 21.6 ns | -- | -- | -- |
| ID Continuous Drain Current | 59 A | -- | -- | -- |
| Pd Power Dissipation | 1.5 W | -- | -- | -- |
| Qg Gate Charge | 28.6 nC | -- | -- | -- |
| Rds on Drain Source Resistance | 17.4 mOhms | -- | -- | -- |
| Action |
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