Diodes Incorporated DMTH10H003SPSW-13 MOSFETs
MOSFET BVDSS: 61V~100V POWERDI50
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMTH10H003SPSW-13
Base Model
Detailed Description
MOSFET BVDSS: 61V~100V POWERDI50
Package
PowerTDFN-8
Lifecycle Status
Active
Datasheet
DMTH10H003SPSW-13 Datasheet
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Technical Specifications
Diodes Incorporated DMTH10H003SPSW-13 MOSFETs technical specifications.
General
RoHS
Yes
Package
PowerTDFN-8
Alternate Parts Comparison (DMTH10H003SPSW-13 vs DMTH10H025LK3Q-13 vs DMTH10H010SPSQ-13 vs DMTH10H017LPDQ-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerTDFN-8 | TO-252-3 | PowerTDFN-8 | PowerTDFN-8 |
| Mounting Type | -- | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | -- | - 55°C ~ + 175°C | - 55°C ~ + 175°C | - 55°C ~ + 175°C |
| Number of Channels | -- | 1 Channel | 1 Channel | 2 Channel |
| Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| Configuration | -- | Single | Single | Dual |
| Fall Time | -- | 8.2 ns | 29.5 ns | 21.6 ns |
| ID Continuous Drain Current | -- | 51.7 A | 100 A | 59 A |
| Pd Power Dissipation | -- | 100 W | 166 W | 1.5 W |
| Qg Gate Charge | -- | 21 nC | 56.4 nC | 28.6 nC |
| Rds on Drain Source Resistance | -- | 22 mOhms | 8.8 mOhms | 17.4 mOhms |
| Action |
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