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Diodes Incorporated DMC1018UPDWQ-13 MOSFETs

MOSFET N/P-CH 12V 20.9A PWRDI50

225,000 ActiveDiodes IncorporatedPowerTDFN-8$0.77
DMC1018UPDWQ-13 PowerTDFN-8 package illustration

Same model may have multiple batches, images only for reference.

DMC1018UPDWQ-13
Part Number (MPN)
DMC1018UPDWQ-13
Detailed Description
MOSFET N/P-CH 12V 20.9A PWRDI50
Package
PowerTDFN-8
Lifecycle Status
Active
Datasheet
PDF DMC1018UPDWQ-13 Datasheet
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Technical Specifications

Diodes Incorporated DMC1018UPDWQ-13 MOSFETs technical specifications.

General

RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel, P-Channel
Vds Drain Source Breakdown Voltage
12 V, 20 V
ID Continuous Drain Current
31.3 A, 20.9 A
Rds on Drain Source Resistance
17 mOhms, 53 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V, - 12 V, + 12 V

Alternate Parts Comparison (DMC1018UPDWQ-13 vs DMN2005UPS-13 vs DMNH6042SPS-13 vs DMTH6009SPS-13)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSYesYesYesYes
PackagePowerTDFN-8PowerTDFN-8PowerTDFN-8PowerTDFN-8
Mounting TypeSMD/SMT----SMD/SMT
TechnologySi----Si
Operating Temperature- 55°C ~ + 150°C------
Number of Channels2 Channel------
Channel ModeEnhancement------
ConfigurationDual------
Fall Time21.9 ns, 28.1 ns------
ID Continuous Drain Current31.3 A, 20.9 A------
Pd Power Dissipation25 W------
Qg Gate Charge30.4 nC, 19 nC------
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