Diodes Incorporated DMC1018UPDWQ-13 MOSFETs
MOSFET N/P-CH 12V 20.9A PWRDI50
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMC1018UPDWQ-13
Detailed Description
MOSFET N/P-CH 12V 20.9A PWRDI50
Package
PowerTDFN-8
Lifecycle Status
Active
Datasheet
DMC1018UPDWQ-13 Datasheet
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Technical Specifications
Diodes Incorporated DMC1018UPDWQ-13 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel, P-Channel
Vds Drain Source Breakdown Voltage
12 V, 20 V
ID Continuous Drain Current
31.3 A, 20.9 A
Rds on Drain Source Resistance
17 mOhms, 53 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V, - 12 V, + 12 V
Related Parts Comparison (DMC1018UPDWQ-13 vs DMN2005UPS-13 vs DMNH6042SPS-13 vs DMTH6009SPS-13)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerTDFN-8 | PowerTDFN-8 | PowerTDFN-8 | PowerTDFN-8 |
| Mounting Type | SMD/SMT | -- | -- | SMD/SMT |
| Technology | Si | -- | -- | Si |
| Operating Temperature | - 55°C ~ + 150°C | -- | -- | -- |
| Number of Channels | 2 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Dual | -- | -- | -- |
| Fall Time | 21.9 ns, 28.1 ns | -- | -- | -- |
| ID Continuous Drain Current | 31.3 A, 20.9 A | -- | -- | -- |
| Pd Power Dissipation | 25 W | -- | -- | -- |
| Qg Gate Charge | 30.4 nC, 19 nC | -- | -- | -- |
| Action |
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