Diodes Incorporated DMTH10H010LCTB-13 MOSFETs
MOSFET N-CH 100V 108A TO220AB
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMTH10H010LCTB-13
Base Model
Detailed Description
MOSFET N-CH 100V 108A TO220AB
Package
TO-263AB-3
Lifecycle Status
Active
Datasheet
DMTH10H010LCTB-13 Datasheet
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Technical Specifications
Diodes Incorporated DMTH10H010LCTB-13 MOSFETs technical specifications.
General
Series
DMTH10H010
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 175°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
100 A
Rds on Drain Source Resistance
9.5 mOhms
Alternate Parts Comparison (DMTH10H010LCTB-13 vs DMTH10H010LPS-13 vs DMTH10H032LPDWQ-13 vs DMTH10H1M7STLWQ-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-263AB-3 | PowerTDFN-8 | 8-PowerTDFN | POWERDI1012-8 |
| Series | DMTH10H010 | -- | -- | -- |
| Mounting Type | SMD/SMT | -- | -- | -- |
| Operating Temperature | - 55°C ~ + 175°C | -- | -- | -- |
| Number of Channels | 1 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| ID Continuous Drain Current | 100 A | -- | -- | -- |
| Pd Power Dissipation | 125 W | -- | -- | -- |
| Qg Gate Charge | 53.7 nC | -- | -- | -- |
| Rds on Drain Source Resistance | 9.5 mOhms | -- | -- | -- |
| Action |
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