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Diodes Incorporated DMT6007LFGQ-13 MOSFETs

MOSFET N-CH 60V 15A PWRDI3333

79 ActiveDiodes IncorporatedDMT6007LFGQPowerVDFN-8$5.29
DMT6007LFGQ-13 PowerVDFN-8 package illustration

Same model may have multiple batches, images only for reference.

DMT6007LFGQ-13
Part Number (MPN)
DMT6007LFGQ-13
Base Model
Detailed Description
MOSFET N-CH 60V 15A PWRDI3333
Package
PowerVDFN-8
Lifecycle Status
Active
Datasheet
PDF DMT6007LFGQ-13 Datasheet
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Ordering Code Family

DMT6007LFGQ groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated DMT6007LFGQ-13 MOSFETs technical specifications.

General

RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
80 A
Rds on Drain Source Resistance
6 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V

Related Parts Comparison (DMT6007LFGQ-13 vs DMT6007LFGQ-7 vs DMT3009UFVW-13 vs DMP3045LFVW-13)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYesYesYesYes
PackagePowerVDFN-8PowerVDFN-8PowerVDFN-8PowerVDFN-8
Mounting TypeSMD/SMTSMD/SMTSMD/SMT--
Operating Temperature- 55°C ~ + 150°C- 55°C ~ + 150°C- 55°C ~ + 150°C--
Number of Channels1 Channel1 Channel1 Channel--
Channel ModeEnhancementEnhancementEnhancement--
ConfigurationSingleSingleSingle--
Fall Time9.7 ns9.7 ns1.6 ns--
ID Continuous Drain Current80 A80 A10.6 A--
Pd Power Dissipation62.5 W62.5 W1.2 W--
Qg Gate Charge41.3 nC41.3 nC14.6 nC--
Rds on Drain Source Resistance6 mOhms6 mOhms11 mOhms--
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