Diodes Incorporated DMN10H170SFGQ-13 MOSFETs
MOSFET N-CH 100V PWRDI3333
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN10H170SFGQ-13
Base Model
Detailed Description
MOSFET N-CH 100V PWRDI3333
Package
PowerVDFN-8
Lifecycle Status
Active
Datasheet
DMN10H170SFGQ-13 Datasheet
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Technical Specifications
Diodes Incorporated DMN10H170SFGQ-13 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
3.7 A
Rds on Drain Source Resistance
133 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (DMN10H170SFGQ-13 vs DMN10H099SK3-13 vs DMN10H100SK3-13 vs DMN10H220LK3-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerVDFN-8 | TO-252-3 | TO-252-3 | TO-252-3 |
| Mounting Type | SMD/SMT | -- | -- | -- |
| Operating Temperature | - 55°C ~ + 150°C | -- | -- | -- |
| Number of Channels | 1 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Fall Time | 3.4 ns | -- | -- | -- |
| ID Continuous Drain Current | 3.7 A | -- | -- | -- |
| Pd Power Dissipation | 2 W | -- | -- | -- |
| Qg Gate Charge | 14.9 nC | -- | -- | -- |
| Qualification | AEC-Q101 | -- | -- | -- |
| Action |
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