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Diodes Incorporated DMP3045LFVWQ-13 MOSFETs

MOSFET BVDSS: 25V~30V POWERDI333

360,000 ActiveDiodes IncorporatedDMP3045LFVWPowerVDFN-8$0.45
DMP3045LFVWQ-13 PowerVDFN-8 package illustration

Same model may have multiple batches, images only for reference.

DMP3045LFVWQ-13
Part Number (MPN)
DMP3045LFVWQ-13
Base Model
Detailed Description
MOSFET BVDSS: 25V~30V POWERDI333
Package
PowerVDFN-8
Lifecycle Status
Active
Datasheet
PDF DMP3045LFVWQ-13 Datasheet
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Ordering Code Family

DMP3045LFVW groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated DMP3045LFVWQ-13 MOSFETs technical specifications.

General

RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
19.9 A
Rds on Drain Source Resistance
42 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V

Related Parts Comparison (DMP3045LFVWQ-13 vs DMP3045LFVW-13 vs DMP4015SK3Q-13 vs DMP3013SFV-13)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYesYesYesYes
PackagePowerVDFN-8PowerVDFN-8TO-252-3PowerVDFN-8
Mounting TypeSMD/SMT--SMD/SMTSMD/SMT
Number of Channels1 Channel--1 Channel1 Channel
Channel ModeEnhancement--EnhancementEnhancement
ID Continuous Drain Current19.9 A--35 A35 A
Pd Power Dissipation2.1 W--3.5 W31 W
Qg Gate Charge13.6 nC--47.5 nC33.7 nC
Rds on Drain Source Resistance42 mOhms--11 mOhms9.5 mOhms
TechnologySi--SiSi
Transistor PolarityP-Channel--P-ChannelP-Channel
Vds Drain Source Breakdown Voltage30 V--40 V30 V
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