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Diodes Incorporated DMP3013SFV-13 MOSFETs

MOSFET P-CH 30V 12A PWRDI3333

360,000 ActiveDiodes IncorporatedDMP3013SFVPowerVDFN-8$0.45
DMP3013SFV-13 PowerVDFN-8 package illustration

Same model may have multiple batches, images only for reference.

DMP3013SFV-13
Part Number (MPN)
DMP3013SFV-13
Base Model
Detailed Description
MOSFET P-CH 30V 12A PWRDI3333
Package
PowerVDFN-8
Lifecycle Status
Active
Datasheet
PDF DMP3013SFV-13 Datasheet
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Ordering Code Family

DMP3013SFV groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated DMP3013SFV-13 MOSFETs technical specifications.

General

RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
35 A
Rds on Drain Source Resistance
9.5 mOhms
Vgs Gate Source Voltage
- 25 V, + 25 V

Related Parts Comparison (DMP3013SFV-13 vs DMP3013SFV-7 vs DMP3045LFVW-13 vs DMP3045LFVWQ-13)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYesYesYesYes
PackagePowerVDFN-8PowerVDFN-8PowerVDFN-8PowerVDFN-8
Mounting TypeSMD/SMTSMD/SMT--SMD/SMT
Number of Channels1 Channel1 Channel--1 Channel
Channel ModeEnhancementEnhancement--Enhancement
ID Continuous Drain Current35 A35 A--19.9 A
Pd Power Dissipation31 W31 W--2.1 W
Qg Gate Charge33.7 nC33.7 nC--13.6 nC
Rds on Drain Source Resistance9.5 mOhms8 mOhms--42 mOhms
TechnologySiSi--Si
Transistor PolarityP-ChannelP-Channel--P-Channel
Vds Drain Source Breakdown Voltage30 V30 V--30 V
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