Diodes Incorporated DMT6005LFG-13 MOSFETs
MOSFET N-CH 60V PWRDI3333
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMT6005LFG-13
Base Model
Detailed Description
MOSFET N-CH 60V PWRDI3333
Package
PowerVDFN-8
Lifecycle Status
Active
Datasheet
DMT6005LFG-13 Datasheet
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Technical Specifications
Diodes Incorporated DMT6005LFG-13 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
18 A
Rds on Drain Source Resistance
4.1 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Related Parts Comparison (DMT6005LFG-13 vs DMT6005LFG-7 vs DMT3009UFVW-13 vs DMP3045LFVW-13)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerVDFN-8 | PowerVDFN-8 | PowerVDFN-8 | PowerVDFN-8 |
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | -- |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C | -- |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | -- |
| Channel Mode | Enhancement | Enhancement | Enhancement | -- |
| Configuration | Single | Single | Single | -- |
| Fall Time | 11 ns | 11 ns | 1.6 ns | -- |
| ID Continuous Drain Current | 18 A | 18 A | 10.6 A | -- |
| Pd Power Dissipation | 1.98 W | 1.98 W | 1.2 W | -- |
| Qg Gate Charge | 48.7 nC | 48.7 nC | 14.6 nC | -- |
| Rds on Drain Source Resistance | 4.1 mOhms | 4.1 mOhms | 11 mOhms | -- |
| Action |
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