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Diodes Incorporated DMT47M2SFVWQ-13 MOSFETs

MOSFET N-CH 40V PWRDI3333

3,000 ActiveDiodes IncorporatedDMT47MPowerVDFN-8$1.39
DMT47M2SFVWQ-13 PowerVDFN-8 package illustration

Same model may have multiple batches, images only for reference.

DMT47M2SFVWQ-13
Part Number (MPN)
DMT47M2SFVWQ-13
Base Model
Detailed Description
MOSFET N-CH 40V PWRDI3333
Package
PowerVDFN-8
Lifecycle Status
Active
Datasheet
PDF DMT47M2SFVWQ-13 Datasheet
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Ordering Code Family

DMT47M groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

4 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated DMT47M2SFVWQ-13 MOSFETs technical specifications.

General

RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
40 V
ID Continuous Drain Current
49.1 A
Rds on Drain Source Resistance
7.5 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V

Related Parts Comparison (DMT47M2SFVWQ-13 vs DMT47M2SFVWQ-7 vs DMT47M2LDVQ-7 vs DMT47M2LDVQ-13)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSMD/SMTSMD/SMTSMD/SMTSMD/SMT
Operating Temperature- 55°C ~ + 150°C- 55°C ~ + 150°C- 55°C ~ + 150°C- 55°C ~ + 150°C
Number of Channels1 Channel1 Channel2 Channel2 Channel
RoHSYesYesYesYes
Channel ModeEnhancementEnhancementEnhancementEnhancement
ConfigurationSingleSingleDualDual
Fall Time5.59 ns5.59 ns8.53 ns8.53 ns
ID Continuous Drain Current49.1 A49.1 A30.2 A30.2 A
PackagePowerVDFN-8PowerVDFN-8PowerVDFN-8PowerVDFN-8
Pd Power Dissipation2.67 W2.67 W2.34 W2.34 W
Qg Gate Charge12.1 nC12.1 nC14 nC14 nC
QualificationAEC-Q101AEC-Q101AEC-Q101AEC-Q101
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