Diodes Incorporated DMT47M2LDVQ-13 MOSFETs
MOSFET 2N-CH 40V 11.9A PWRDI3333
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMT47M2LDVQ-13
Base Model
Detailed Description
MOSFET 2N-CH 40V 11.9A PWRDI3333
Package
PowerVDFN-8
Lifecycle Status
Active
Datasheet
DMT47M2LDVQ-13 Datasheet
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Technical Specifications
Diodes Incorporated DMT47M2LDVQ-13 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
40 V
ID Continuous Drain Current
30.2 A
Rds on Drain Source Resistance
10.8 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Related Parts Comparison (DMT47M2LDVQ-13 vs DMT47M2SFVWQ-7 vs DMT47M2LDVQ-7 vs DMT47M2SFVWQ-13)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | 2 Channel | 1 Channel | 2 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Dual | Single | Dual | Single |
| Fall Time | 8.53 ns | 5.59 ns | 8.53 ns | 5.59 ns |
| ID Continuous Drain Current | 30.2 A | 49.1 A | 30.2 A | 49.1 A |
| Package | PowerVDFN-8 | PowerVDFN-8 | PowerVDFN-8 | PowerVDFN-8 |
| Pd Power Dissipation | 2.34 W | 2.67 W | 2.34 W | 2.67 W |
| Qg Gate Charge | 14 nC | 12.1 nC | 14 nC | 12.1 nC |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Action |
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