Diodes Incorporated DMT10H025SSS-13 MOSFETs
MOSFET N-CH 100V 7.4A 8SO
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMT10H025SSS-13
Base Model
Detailed Description
MOSFET N-CH 100V 7.4A 8SO
Package
8-SOIC (0.154", 3.90mm Width)
Lifecycle Status
Active
Datasheet
DMT10H025SSS-13 Datasheet
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Technical Specifications
Diodes Incorporated DMT10H025SSS-13 MOSFETs technical specifications.
General
RoHS
Compliant
Number of Pins
8
Number of Channels
1 Channel
Package / Case
8-SOIC
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Automotive
No
Channel Mode
Enhancement
Channel Type
N
Alternate Parts Comparison (DMT10H025SSS-13 vs DMT10H010LSS-13 vs DMT10H010LPS-13 vs DMT10H014LSS-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Compliant | Yes | Yes | Yes |
| Package | Tape & Reel (TR) | SOIC-8 | PowerTDFN-8 | SOIC-8 |
| Mounting Type | Surface Mount | -- | SMD/SMT | SMD/SMT |
| Operating Temperature | -55°C ~ 150°C (TJ) | -- | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single Quad Drain Triple Source | -- | Single | Single |
| ID Continuous Drain Current | 7.4 A | -- | 9.4 A | 8.9 A |
| Pd Power Dissipation | 12.9 W | -- | 139 W | 1.67 W |
| Qg Gate Charge | 21.4 nC | -- | 58.4 nC | 33.3 nC |
| Rds on Drain Source Resistance | 23 mOhms | -- | 8.3 mOhms | 15 mOhms |
| Technology | MOSFET (Metal Oxide) | -- | Si | Si |
| Action |
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