Diodes Incorporated DMT10H015LFG-13 MOSFETs
MOSFET N-CH 100V PWRDI3333
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMT10H015LFG-13
Base Model
Detailed Description
MOSFET N-CH 100V PWRDI3333
Package
PowerVDFN-8
Lifecycle Status
Active
Datasheet
DMT10H015LFG-13 Datasheet
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Technical Specifications
Diodes Incorporated DMT10H015LFG-13 MOSFETs technical specifications.
General
Series
DMT10
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
42 A
Rds on Drain Source Resistance
13.5 mOhms
Alternate Parts Comparison (DMT10H015LFG-13 vs DMT10H010LSS-13 vs DMT10H014LSS-13 vs DMT10H010LPS-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerVDFN-8 | SOIC-8 | SOIC-8 | PowerTDFN-8 |
| Mounting Type | SMD/SMT | -- | SMD/SMT | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | -- | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| ID Continuous Drain Current | 42 A | -- | 8.9 A | 9.4 A |
| Pd Power Dissipation | 2 W | -- | 1.67 W | 139 W |
| Qg Gate Charge | 33.3 nC | -- | 33.3 nC | 58.4 nC |
| Rds on Drain Source Resistance | 13.5 mOhms | -- | 15 mOhms | 8.3 mOhms |
| Technology | Si | -- | Si | Si |
| Action |
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