Diodes Incorporated DMT10H010LPS-13 MOSFETs
MOSFET N-CH 100V 9.4A PWRDI5060
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMT10H010LPS-13
Base Model
Detailed Description
MOSFET N-CH 100V 9.4A PWRDI5060
Package
PowerTDFN-8
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Diodes Incorporated DMT10H010LPS-13 MOSFETs technical specifications.
General
Series
DMT10H010
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
9.4 A
Rds on Drain Source Resistance
8.3 mOhms
Alternate Parts Comparison (DMT10H010LPS-13 vs DMT10H010LSS-13 vs DMT10H009LK3-13 vs DMT10H072LFV-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerTDFN-8 | SOIC-8 | TO-252-3 | PowerVDFN-8 |
| Mounting Type | SMD/SMT | -- | SMD/SMT | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | -- | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| ID Continuous Drain Current | 9.4 A | -- | 90 A | 20 A |
| Pd Power Dissipation | 139 W | -- | 1.7 W | 37.8 W |
| Qg Gate Charge | 58.4 nC | -- | 20 nC | 4.5 nC |
| Rds on Drain Source Resistance | 8.3 mOhms | -- | 9 mOhms | 62 mOhms |
| Technology | Si | -- | Si | Si |
| Action |
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