Diodes Incorporated DMT10H010LSS-13 MOSFETs
MOSFET N-CH 100V 11.5A/29.5A 8SO
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMT10H010LSS-13
Base Model
Detailed Description
MOSFET N-CH 100V 11.5A/29.5A 8SO
Package
SOIC-8
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMT10H010LSS-13 MOSFETs technical specifications.
General
RoHS
Yes
Package
SOIC-8
Alternate Parts Comparison (DMT10H010LSS-13 vs DMT10H015LPS-13 vs DMT10H015LFG-13 vs DMT10H009LK3-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOIC-8 | PowerTDFN-8 | PowerVDFN-8 | TO-252-3 |
| Mounting Type | -- | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | -- | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | -- | 1 Channel | 1 Channel | 1 Channel |
| Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| Configuration | -- | Single | Single | Single |
| Fall Time | -- | 8.1 nS | 8.1 ns | 14.9 ns |
| ID Continuous Drain Current | -- | 44 A | 42 A | 90 A |
| Pd Power Dissipation | -- | 1.3 W | 2 W | 1.7 W |
| Qg Gate Charge | -- | 33.3 nC | 33.3 nC | 20 nC |
| Rds on Drain Source Resistance | -- | 16 mOhms | 13.5 mOhms | 9 mOhms |
| Action |
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