Diodes Incorporated DMS2120LFWB-7 MOSFETs
MOSFET P-CH 20V 2.9A 8DFN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMS2120LFWB-7
Detailed Description
MOSFET P-CH 20V 2.9A 8DFN
Package
DFN3020B-8
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
DMS2120LFWB-7 Datasheet
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Technical Specifications
Diodes Incorporated DMS2120LFWB-7 MOSFETs technical specifications.
General
RoHS
Yes
Feature Configuration
Single Dual Drain
Feature Channel Mode
Enhancement
Feature Channel Type
P
Feature Number of Elements Per Chip
1
Feature Maximum Drain Source Voltage V
20
Feature Maximum Gate Source Voltage V
±12
Feature Maximum Continuous Drain Current a
2.9
Feature Maximum Drain Source Resistance Mohm
95@4.5V
Feature Typical Input Capacitance Vds Pf
632@10V
Alternate Parts Comparison (DMS2120LFWB-7 vs DMS2085LSD-13 vs DMS2220LFDB-7 vs DMS3015SSS-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | DFN-8 | 8-SO | DFN-2020-6 | SO-8 |
| Feature AEC Qualified | No | -- | -- | No |
| Feature Auto Motive | No | -- | -- | No |
| Feature Cecc Qualified | No | -- | -- | No |
| Feature Channel Mode | Enhancement | -- | -- | Enhancement |
| Feature Channel Type | P | -- | -- | N |
| Feature Configuration | Single Dual Drain | -- | -- | Single Quad Drain Triple Source |
| Feature Maximum Continuous Drain Current a | 2.9 | -- | -- | 11 |
| Feature Maximum Drain Source Resistance Mohm | 95@4.5V | -- | -- | 11.9@10V |
| Feature Maximum Drain Source Voltage V | 20 | -- | -- | 30 |
| Feature Maximum Gate Source Voltage V | ±12 | -- | -- | ±20 |
| Action |
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