Diodes Incorporated DMS3015SSS-13 MOSFETs
MOSFET N-CH 30V 11A 8SO
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMS3015SSS-13
Detailed Description
MOSFET N-CH 30V 11A 8SO
Package
SO-8
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Diodes Incorporated DMS3015SSS-13 MOSFETs technical specifications.
General
RoHS
Yes
Feature Configuration
Single Quad Drain Triple Source
Feature Channel Mode
Enhancement
Feature Channel Type
N
Feature Number of Elements Per Chip
1
Feature Maximum Drain Source Voltage V
30
Feature Maximum Gate Source Voltage V
±20
Feature Maximum Continuous Drain Current a
11
Feature Maximum Drain Source Resistance Mohm
11.9@10V
Feature Typical Gate Charge Vgs Nc
30.6@10V|14.3@4.5V
Alternate Parts Comparison (DMS3015SSS-13 vs DMS2085LSD-13 vs DMS2220LFDB-7 vs DMS2120LFWB-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SO-8 | 8-SO | DFN-2020-6 | DFN-8 |
| Feature AEC Qualified | No | -- | -- | No |
| Feature Auto Motive | No | -- | -- | No |
| Feature Cecc Qualified | No | -- | -- | No |
| Feature Channel Mode | Enhancement | -- | -- | Enhancement |
| Feature Channel Type | N | -- | -- | P |
| Feature Configuration | Single Quad Drain Triple Source | -- | -- | Single Dual Drain |
| Feature Maximum Continuous Drain Current a | 11 | -- | -- | 2.9 |
| Feature Maximum Drain Source Resistance Mohm | 11.9@10V | -- | -- | 95@4.5V |
| Feature Maximum Drain Source Voltage V | 30 | -- | -- | 20 |
| Feature Maximum Gate Source Voltage V | ±20 | -- | -- | ±12 |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
