Diodes Incorporated DMP2006UFGQ-13 MOSFETs
MOSFET P-CH 20V PWRDI3333
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMP2006UFGQ-13
Base Model
Detailed Description
MOSFET P-CH 20V PWRDI3333
Package
PowerVDFN-8
Lifecycle Status
Active
Datasheet
DMP2006UFGQ-13 Datasheet
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Technical Specifications
Diodes Incorporated DMP2006UFGQ-13 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
40 A
Rds on Drain Source Resistance
5.5 mOhms
Vgs Gate Source Voltage
- 10 V, + 10 V
Related Parts Comparison (DMP2006UFGQ-13 vs DMP2006UFGQ-7 vs DMP3045LFVW-13 vs DMP3045LFVWQ-13)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerVDFN-8 | PowerVDFN-8 | PowerVDFN-8 | PowerVDFN-8 |
| Mounting Type | SMD/SMT | SMD/SMT | -- | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | -- | - 55°C ~ + 150°C |
| Number of Channels | 1 Channel | 1 Channel | -- | 1 Channel |
| Channel Mode | Enhancement | Enhancement | -- | Enhancement |
| ID Continuous Drain Current | 40 A | 40 A | -- | 19.9 A |
| Pd Power Dissipation | 41 W | 41 W | -- | 2.1 W |
| Qg Gate Charge | 200 nC | 200 nC | -- | 13.6 nC |
| Rds on Drain Source Resistance | 5.5 mOhms | 5.5 mOhms | -- | 42 mOhms |
| Technology | Si | Si | -- | Si |
| Transistor Polarity | P-Channel | P-Channel | -- | P-Channel |
| Action |
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