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Diodes Incorporated DMN6013LFGQ-7 MOSFETs

MOSFET N-CH 60V 10.3A PWRDI3333

2,000 ActiveDiodes IncorporatedDMN6013LFGQPowerVDFN-8$0.76
DMN6013LFGQ-7 PowerVDFN-8 package illustration

Same model may have multiple batches, images only for reference.

DMN6013LFGQ-7
Part Number (MPN)
DMN6013LFGQ-7
Base Model
Detailed Description
MOSFET N-CH 60V 10.3A PWRDI3333
Package
PowerVDFN-8
Lifecycle Status
Active
Datasheet
PDF DMN6013LFGQ-7 Datasheet
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Ordering Code Family

DMN6013LFGQ groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated DMN6013LFGQ-7 MOSFETs technical specifications.

General

RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
45 A
Rds on Drain Source Resistance
9.3 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V

Related Parts Comparison (DMN6013LFGQ-7 vs DMN6013LFGQ-13 vs DMN3018SFGQ-13 vs DMN3025LFG-13)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYesYesYesYes
PackagePowerVDFN-8PowerVDFN-8PowerVDFN-8PowerVDFN-8
Mounting TypeSMD/SMT--SMD/SMTSMD/SMT
TechnologySi--SiSi
Unit Weight0.001058 oz--0.001058 oz0.001058 oz
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