Diodes Incorporated DMN2055UW-7 MOSFETs
MOSFET BVDSS: 8V~24V SOT323 T&R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN2055UW-7
Detailed Description
MOSFET BVDSS: 8V~24V SOT323 T&R
Package
SOT-323-3
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMN2055UW-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
3.1 A
Rds on Drain Source Resistance
46 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V
Alternate Parts Comparison (DMN2055UW-7 vs DMN2004WKQ-7 vs DMN601WKQ-13 vs DMN601WKQ-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 65°C ~ + 150°C | - 65°C ~ + 150°C |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| ID Continuous Drain Current | 3.1 A | 540 mA | 300 mA | 300 mA |
| Package | SOT-323-3 | SOT-323-3 | SOT-323-3 | SOT-323-3 |
| Pd Power Dissipation | 520 mW | 200 mW | 200 mW | 200 mW |
| Rds on Drain Source Resistance | 46 mOhms | 550 mOhms | 2 Ohms | 3 Ohms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | N-Channel | N-Channel | N-Channel | N-Channel |
| Unit Weight | 0.000212 oz | 0.000212 oz | 0.000212 oz | 0.000212 oz |
| Action |
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