Diodes Incorporated DMN3016LFDE-7 MOSFETs
MOSFET N-CH 30V 10A 6UDFN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN3016LFDE-7
Base Model
Detailed Description
MOSFET N-CH 30V 10A 6UDFN
Package
DFN2020-6
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMN3016LFDE-7 MOSFETs technical specifications.
General
Series
DMN3016
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
10 A
Rds on Drain Source Resistance
16 mOhms
Alternate Parts Comparison (DMN3016LFDE-7 vs DMN3016LFDE-13 vs DMN3021LFDF-7 vs DMN10H170SFDE-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| ID Continuous Drain Current | 10 A | 10 A | 9.3 A | 2.9 A |
| Package | DFN2020-6 | UDFN-6 | DFN2020-6 | DFN2020-6 |
| Pd Power Dissipation | 2.02 W | 2.02 W | 2.03 W | 2.03 W |
| Qg Gate Charge | 25.1 nC | 25.1 nC | 14 nC | 9.7 nC |
| Rds on Drain Source Resistance | 16 mOhms | 16 mOhms | 15 mOhms | 160 mOhms |
| Technology | Si | Si | Si | Si |
| Action |
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