Diodes Incorporated DMN3016LFDE-13 MOSFETs
MOSFET N-CH 30V 10A 6UDFN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN3016LFDE-13
Base Model
Detailed Description
MOSFET N-CH 30V 10A 6UDFN
Package
UDFN-6
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMN3016LFDE-13 MOSFETs technical specifications.
General
Series
DMN3016
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
10 A
Rds on Drain Source Resistance
16 mOhms
Alternate Parts Comparison (DMN3016LFDE-13 vs DMN3016LFDE-7 vs DMN2011UFDF-7 vs DMN63D8LDWQ-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 2 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| ID Continuous Drain Current | 10 A | 10 A | 11.7 A | 220 mA |
| Package | UDFN-6 | DFN2020-6 | UDFN-6 | TSSOP-6 |
| Pd Power Dissipation | 2.02 W | 2.02 W | 2.1 W | 300 mW |
| Qg Gate Charge | 25.1 nC | 25.1 nC | 56 nC | 870 pC |
| Rds on Drain Source Resistance | 16 mOhms | 16 mOhms | 9.5 mOhms | 2.8 Ohms, 2.8 Ohms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | N-Channel | N-Channel | N-Channel | N-Channel |
| Unit Weight | 0.000300 oz | 0.000238 oz | 0.002293 oz | 0.000265 oz |
| Action |
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