Diodes Incorporated DMN3021LFDF-7 MOSFETs
MOSFET N-CH 30V 11.8A 6UDFN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN3021LFDF-7
Detailed Description
MOSFET N-CH 30V 11.8A 6UDFN
Package
DFN2020-6
Lifecycle Status
Active
Datasheet
DMN3021LFDF-7 Datasheet
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Technical Specifications
Diodes Incorporated DMN3021LFDF-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
9.3 A
Rds on Drain Source Resistance
15 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (DMN3021LFDF-7 vs DMN63D8LDWQ-7 vs DMN61D8LVTQ-7 vs DMN3016LPS-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 2 Channel | 2 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Dual | Dual | Single |
| ID Continuous Drain Current | 9.3 A | 220 mA | 630 mA | 10.8 A |
| Package | DFN2020-6 | TSSOP-6 | SOT-23-6 | PowerTDFN-8 |
| Pd Power Dissipation | 2.03 W | 300 mW | 1.09 W | 1.18 W |
| Qg Gate Charge | 14 nC | 870 pC | 740 pC | 25.1 nC |
| Rds on Drain Source Resistance | 15 mOhms | 2.8 Ohms, 2.8 Ohms | 1.1 Ohms | 16 mOhms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | N-Channel | N-Channel | N-Channel | N-Channel |
| Action |
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