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Diodes Incorporated DMN2005UFGQ-13 MOSFETs

MOSFET N-CH 20V 18A PWRDI3333

3,000 ActiveDiodes IncorporatedPowerVDFN-8$0.88
DMN2005UFGQ-13 PowerVDFN-8 package illustration

Same model may have multiple batches, images only for reference.

DMN2005UFGQ-13
Part Number (MPN)
DMN2005UFGQ-13
Detailed Description
MOSFET N-CH 20V 18A PWRDI3333
Package
PowerVDFN-8
Lifecycle Status
Active
Datasheet
PDF DMN2005UFGQ-13 Datasheet
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Technical Specifications

Diodes Incorporated DMN2005UFGQ-13 MOSFETs technical specifications.

General

RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
50 A
Rds on Drain Source Resistance
8.7 mOhms
Vgs Gate Source Voltage
- 12 V, + 12 V

Related Parts Comparison (DMN2005UFGQ-13 vs DMN3018SFGQ-13 vs DMN3025LFG-13 vs DMN3027LFG-13)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSMD/SMTSMD/SMTSMD/SMTSMD/SMT
RoHSYesYesYesYes
PackagePowerVDFN-8PowerVDFN-8PowerVDFN-8PowerVDFN-8
TechnologySiSiSiSi
Unit Weight0.001058 oz0.001058 oz0.001058 oz0.001058 oz
Number of Channels1 Channel--1 Channel1 Channel
ConfigurationSingle--SingleSingle
Transistor PolarityN-Channel--N-ChannelN-Channel
Transistor Type1 N-Channel--1 N-Channel1 N-Channel
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