Diodes Incorporated DMN2005UFG-13 MOSFETs
MOSFET N-CH 20V 18.1A PWRDI3333
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN2005UFG-13
Base Model
Detailed Description
MOSFET N-CH 20V 18.1A PWRDI3333
Package
PowerVDFN-8
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMN2005UFG-13 MOSFETs technical specifications.
General
Series
DMN2005
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
18.1 A
Rds on Drain Source Resistance
8.7 mOhms
Related Parts Comparison (DMN2005UFG-13 vs DMN2005UFGQ-13 vs DMN2005UFG-7 vs DMN3018SFGQ-13)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerVDFN-8 | PowerVDFN-8 | PowerVDFN-8 | PowerVDFN-8 |
| Technology | Si | Si | Si | Si |
| Unit Weight | 0.001058 oz | 0.001058 oz | 0.001058 oz | 0.001058 oz |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C | -- |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | -- |
| Channel Mode | Enhancement | Enhancement | Enhancement | -- |
| Configuration | Single | Single | Single | -- |
| Fall Time | 38 ns | 38 ns | 38 ns | -- |
| ID Continuous Drain Current | 18.1 A | 50 A | 18.1 A | -- |
| Pd Power Dissipation | 2.27 W | 2.27 W | 2.27 W | -- |
| Action |
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