Diodes Incorporated DMC2710UDW-7 MOSFETs
MOSFET N/P-CH 20V 0.75A SOT363
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMC2710UDW-7
Detailed Description
MOSFET N/P-CH 20V 0.75A SOT363
Package
SOT-363
Lifecycle Status
Active
RoHS State
RoHS3 Compliant
Datasheet
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Technical Specifications
Diodes Incorporated DMC2710UDW-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel, P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
750 mA, 600 mA
Rds on Drain Source Resistance
450 mOhms, 750 mOhms
Vgs Gate Source Voltage
- 6 V, + 6 V
Alternate Parts Comparison (DMC2710UDW-7 vs DMC3400SDW-13 vs BSS84DWQ-13 vs BSS8402DWQ-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Compliant | Yes | Yes |
| Technology | Si | MOSFET (Metal Oxide) | Si | Si |
| Package | TSSOP-6 | -- | TSSOP-6 | TSSOP-6 |
| Mounting Type | SMD/SMT | Surface Mount | -- | -- |
| Operating Temperature | - 55°C ~ + 150°C | -55°C ~ 150°C (TJ) | -- | -- |
| Number of Channels | 2 Channel | 2 Channel | -- | -- |
| Channel Mode | Enhancement | Enhancement | -- | -- |
| Configuration | Dual | N and P-Channel | -- | -- |
| Fall Time | 174 ns, 445 ns | 18.8 ns, 19 ns | -- | -- |
| Pd Power Dissipation | 290 mW | 390 mW | -- | -- |
| Qg Gate Charge | 600 pC, 700 pC | 1.4 nC, 1.3 nC | -- | -- |
| Rds on Drain Source Resistance | 450 mOhms, 750 mOhms | 400 mOhms, 900 mOhms | -- | -- |
| Action |
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