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CEL (California Eastern Laboratories) NESG2101M05-A RF BJT

NESG2101M05-A by CEL (California Eastern Laboratories) · RF BJT · SOT-343F

In Stock ActiveCEL (California Eastern Laboratories)SOT-343F
NESG2101M05-A SOT-343F package illustration

Same model may have multiple batches, images only for reference.

NESG2101M05-A
Part Number (MPN)
NESG2101M05-A
Package
SOT-343F
Lifecycle Status
Active
Datasheet
PDF NESG2101M05-A Datasheet
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Technical Specifications

CEL (California Eastern Laboratories) NESG2101M05-A RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
SMD/SMT
Transistor Type
Bipolar
Technology
SiGe
Emitter Base Voltage Vebo
1.5 V
Continuous Collector Current
35 mA
Maximum Operating Temperature C
+ 150
Pd Power Dissipation
175 mW
Package
SOT-343F

Alternate Parts Comparison (NESG2101M05-A vs NESG2107M33-A vs NESG260234-T1-AZ vs NESG2030M04-A)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSMD/SMTSurface MountSurface MountSurface Mount
Transistor TypeBipolarNPNNPNNPN
Current Collector IC Max--100mA600mA35 mA
Dc Current Gain Hfe Min IC Vce--140 @ 5mA, 1V80 @ 100mA, 3V200 @ 5mA, 2V
Power Max--130mW1.9W80 mW
Voltage Collector Emitter Breakdown Max--5V9.2V2.3 V
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