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CEL (California Eastern Laboratories) NESG2101M05-A RF BJT

NESG2101M05-A by CEL (California Eastern Laboratories) · RF BJT · SOT-343F

In Stock ActiveCEL (California Eastern Laboratories)SOT-343F
NESG2101M05-A SOT-343F package illustration

Same model may have multiple batches, images only for reference.

NESG2101M05-A
Part Number (MPN)
NESG2101M05-A
Package
SOT-343F
Lifecycle Status
Active
Datasheet
PDF NESG2101M05-A Datasheet
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Technical Specifications

CEL (California Eastern Laboratories) NESG2101M05-A RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
SMD/SMT
Transistor Type
Bipolar
Technology
SiGe
Emitter Base Voltage Vebo
1.5 V
Continuous Collector Current
35 mA
Maximum Operating Temperature C
+ 150
Pd Power Dissipation
175 mW
Package
SOT-343F

Related Parts Comparison (NESG2101M05-A vs NESG2107M33-A vs NESG260234-T1-AZ vs NESG2030M04-A)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSMD/SMTSurface MountSurface MountSurface Mount
Transistor TypeBipolarNPNNPNNPN
Current Collector IC Max--100mA600mA35 mA
Dc Current Gain Hfe Min IC Vce--140 @ 5mA, 1V80 @ 100mA, 3V200 @ 5mA, 2V
Power Max--130mW1.9W80 mW
Voltage Collector Emitter Breakdown Max--5V9.2V2.3 V
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