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CEL (California Eastern Laboratories) NESG2030M04-T2-A RF BJT

NESG2030M04-T2-A by CEL (California Eastern Laboratories) · RF BJT · SOT-343F

In StockCEL (California Eastern Laboratories)SOT-343F
NESG2030M04-T2-A SOT-343F package illustration

Same model may have multiple batches, images only for reference.

NESG2030M04-T2-A
Part Number (MPN)
NESG2030M04-T2-A
Package
SOT-343F
Lifecycle Status
Obsolete
Datasheet
PDF NESG2030M04-T2-A Datasheet
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Technical Specifications

CEL (California Eastern Laboratories) NESG2030M04-T2-A RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Surface Mount
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
2.3V
Frequency Transition
60GHz
Noise Figure Db Typ F
0.9dB ~ 1.1dB @ 2GHz
Gain
16dB
Power Max
80mW
Dc Current Gain Hfe Min IC Vce
200 @ 5mA, 2V

Alternate Parts Comparison (NESG2030M04-T2-A vs NESG2107M33-A vs NESG260234-T1-AZ vs NESG2030M04-A)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Current Collector IC Max35mA100mA600mA35 mA
Dc Current Gain Hfe Min IC Vce200 @ 5mA, 2V140 @ 5mA, 1V80 @ 100mA, 3V200 @ 5mA, 2V
Power Max80mW130mW1.9W80 mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max2.3V5V9.2V2.3 V
Lifecycle StatusObsolete--ObsoleteObsolete
Frequency Transition60GHz10GHz--60 GHz
Gain16dB7dB ~ 10dB--16dB
Noise Figure Db Typ F0.9dB ~ 1.1dB @ 2GHz0.9dB ~ 1.5dB @ 2GHz--0.9dB ~ 1.1dB @ 2GHz
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