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CEL (California Eastern Laboratories) NE68033-T1B-R45-A RF BJT

NE68033-T1B-R45-A by CEL (California Eastern Laboratories) · RF BJT · SOT23-3

In StockCEL (California Eastern Laboratories)SOT23-3
NE68033-T1B-R45-A SOT23-3 package illustration

Same model may have multiple batches, images only for reference.

NE68033-T1B-R45-A
Part Number (MPN)
NE68033-T1B-R45-A
Package
SOT23-3
Lifecycle Status
Obsolete
Datasheet
PDF NE68033-T1B-R45-A Datasheet
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Technical Specifications

CEL (California Eastern Laboratories) NE68033-T1B-R45-A RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
10V
Frequency Transition
10GHz
Noise Figure Db Typ F
1.8dB @ 2GHz
Gain
9dB
Power Max
200mW

Related Parts Comparison (NE68033-T1B-R45-A vs NE664M04-T2-A vs NE461M02-T1-QR-AZ vs NE68019-A)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
RoHSYesYesYesYes
Lifecycle StatusObsoleteObsoleteObsoleteObsolete
Current Collector IC Max35mA500mA250mA35mA
Dc Current Gain Hfe Min IC Vce125 @ 10mA, 6V40 @ 100mA, 3V60 @ 50mA, 10V80 @ 5mA, 3V
Gain9dB12dB8.3dB9.6dB
PackageSOT23-3Tape & Reel (TR)Tape & Reel (TR)SOT-523
Power Max200mW735mW2W100mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max10V5V15V10V
Frequency Transition10GHz20GHz--10GHz
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