Vishay SI2307CDS-T1-GE3 MOSFETs
P-CH MOSFET, 30V, 2.7A, 88mR, SOT-23-3, Small Signal
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI2307CDS-T1-GE3
Base Model
Detailed Description
P-CH MOSFET, 30V, 2.7A, 88mR, SOT-23-3, Small Signal
Package
SOT23-3
Lifecycle Status
Active
Datasheet
SI2307CDS-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SI2307CDS-T1-GE3 MOSFETs technical specifications.
General
Series
SI2
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
3.5 A
Rds on Drain Source Resistance
88 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SI2307CDS-T1-GE3 vs SI2307CDS-T1-E3 vs SI2307CDS-T1-BE3 vs SIP32461DB-T2-GE1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT23-3 | SOT23 | SOT23-3 | UFBGA-4 |
| Series | SI2 | SI2 | -- | SIP324x1 |
| Mounting Type | SMD/SMT | SMD/SMT | -- | Surface Mount |
| Maximum Operating Temperature C | + 150 | + 150 | -- | + 85 |
| Minimum Operating Temperature C | - 55 | - 55 | -- | - 40 |
| Pd Power Dissipation | 1.8 W | 1.8 W | -- | 300 mW |
| Unit Weight | 0.000282 oz | 0.000282 oz | -- | 0.002420 oz |
| Action |
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