Vishay SUP70101EL-GE3 MOSFETs
Power Field-Effect Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SUP70101EL-GE3
Detailed Description
Power Field-Effect Transistor
Package
TO220-3
Lifecycle Status
Active
Datasheet
SUP70101EL-GE3 Datasheet
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Technical Specifications
Vishay SUP70101EL-GE3 MOSFETs technical specifications.
General
Series
SUP
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
120 A
Rds on Drain Source Resistance
11.4 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SUP70101EL-GE3 vs SUP85N15-21-E3 vs SUP60N06-12P-GE3 vs SUP70030E-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | ROHS3 Compliant | Yes |
| Series | SUP | -- | TrenchFET® | TrenchFET® |
| Mounting Type | Through Hole | -- | Through Hole | Through Hole |
| Technology | Si | -- | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Configuration | Single | SINGLE WITH BUILT-IN DIODE | -- | -- |
| Package | TO220-3 | TO-220AB | -- | -- |
| Number of Channels | 1 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Fall Time | 40 ns | -- | -- | -- |
| Forward Transconductance Min | 60 S | -- | -- | -- |
| ID Continuous Drain Current | 120 A | -- | -- | -- |
| Maximum Operating Temperature C | + 175 | -- | -- | -- |
| Action |
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