Vishay SUM55P06-19L-E3 MOSFETs
P-CH MOSFET 60V 55A 19mR TO-263 Surface Mount
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SUM55P06-19L-E3
Detailed Description
P-CH MOSFET 60V 55A 19mR TO-263 Surface Mount
Package
D2PAK-3 (TO-263-3)
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Vishay SUM55P06-19L-E3 MOSFETs technical specifications.
General
Series
SUM
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
55 A
Rds on Drain Source Resistance
19 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SUM55P06-19L-E3 vs SUM110P06-08L-E3 vs SUM110P06-07L-E3 vs IRFBC30STRLPBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | SUM | SUM | SUM | IRFBC |
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| ID Continuous Drain Current | 55 A | 110 A | 110 A | 3.6 A |
| Package | D2PAK-3 (TO-263-3) | D2PAK-3 (TO-263-3) | D2PAK-3 (TO-263-3) | D2PAK-3 (TO-263-3) |
| Pd Power Dissipation | 125 W | 272 W | 375 W | 3.1 W |
| Qg Gate Charge | 76 nC | 160 nC | 230 nC | 31 nC |
| Rds on Drain Source Resistance | 19 mOhms | 8 mOhms | 6.9 mOhms | 2.2 Ohms |
| Technology | Si | Si | Si | Si |
| Action |
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