Vishay IRFZ24SPBF MOSFETs
Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IRFZ24SPBF
Detailed Description
Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN
Package
D2PAK-3 (TO-263-3)
Lifecycle Status
Active
Datasheet
IRFZ24SPBF Datasheet
Quick Jump:
Technical Specifications
Vishay IRFZ24SPBF MOSFETs technical specifications.
General
Series
IRLZ
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 175°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
17 A
Rds on Drain Source Resistance
100 mOhms
Alternate Parts Comparison (IRFZ24SPBF vs SUM110P06-08L-E3 vs SUM110P06-07L-E3 vs SUM55P06-19L-E3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | IRLZ | SUM | SUM | SUM |
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| ID Continuous Drain Current | 17 A | 110 A | 110 A | 55 A |
| Package | D2PAK-3 (TO-263-3) | D2PAK-3 (TO-263-3) | D2PAK-3 (TO-263-3) | D2PAK-3 (TO-263-3) |
| Pd Power Dissipation | 60 W | 272 W | 375 W | 125 W |
| Qg Gate Charge | 25 nC | 160 nC | 230 nC | 76 nC |
| Rds on Drain Source Resistance | 100 mOhms | 8 mOhms | 6.9 mOhms | 19 mOhms |
| Technology | Si | Si | Si | Si |
| Action |
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