Vishay SISA12ADN-T1-GE3 MOSFETs
30V 25A N-Ch MOSFET, 4.3mR Rds On, Surface Mount
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SISA12ADN-T1-GE3
Detailed Description
30V 25A N-Ch MOSFET, 4.3mR Rds On, Surface Mount
Package
PowerPAK-1212-8
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
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Technical Specifications
Vishay SISA12ADN-T1-GE3 MOSFETs technical specifications.
General
Series
SIS
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
25 A
Rds on Drain Source Resistance
3.2 mOhms
Vgs Gate Source Voltage
- 16 V, + 20 V
Alternate Parts Comparison (SISA12ADN-T1-GE3 vs SI7114DN-T1-GE3 vs SI7106DN-T1-GE3 vs SIS782DN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Series | SIS | -- | -- | -- |
| Mounting Type | SMD/SMT | -- | -- | -- |
| Number of Channels | 1 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Fall Time | 10 ns | -- | -- | -- |
| Forward Transconductance Min | 51 S | -- | -- | -- |
| ID Continuous Drain Current | 25 A | -- | -- | -- |
| Maximum Operating Temperature C | + 150 | -- | -- | -- |
| Minimum Operating Temperature C | - 55 | -- | -- | -- |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
Suggested replacements
NTTFS4C06NTAGonsemiDirectonsemi
Pin YesPkg YesElec Upgrade
Single N-Channel Power MOSFET 30V, 65A, 4.2mΩ, WDFN8 3.3x3.3, 0.65P, 1500-REEL
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