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Vishay SQJ180EP-T1_GE3 MOSFETs

MOSFETs N-CHANNEL 80-V (D-S) 175C MOSFET

2,134 ActiveVishayReel$1.63
SQJ180EP-T1_GE3 Reel package illustration

Same model may have multiple batches, images only for reference.

SQJ180EP-T1_GE3
Manufacturer
Part Number (MPN)
SQJ180EP-T1_GE3
Detailed Description
MOSFETs N-CHANNEL 80-V (D-S) 175C MOSFET
Package
Reel
Lifecycle Status
Active
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Technical Specifications

Vishay SQJ180EP-T1_GE3 MOSFETs technical specifications.

General

Series
SQJ
RoHS
RoHS Compliant By Exemption
Number of Channels
1 Channel
Package / Case
Reel
Packaging
Reel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 175°C
Channel Mode
Enhancement
ID Continuous Drain Current
248 A
Pd Power Dissipation
500 W

Related Parts Comparison (SQJ180EP-T1_GE3 vs SQJ850EP-T1_GE3 vs SQJ411EP-T1_GE3 vs SQJ974EP-T1_GE3)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
SeriesSQJAutomotive, AEC-Q101, TrenchFET®SQJSQJ
Package / CaseReelTape and ReelPowerPAK-SO-8-4Tape and Reel
Mounting TypeSMD/SMTSurface MountSurface MountSurface Mount
Operating Temperature- 55°C ~ + 175°C-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Number of Channels1 Channel11 Channel2 Channel
RoHSRoHS Compliant By ExemptionCompliantCompliantCompliant
Channel ModeEnhancementEnhancementEnhancementEnhancement
TechnologySiMOSFET (Metal Oxide)SiSi
Pd Power Dissipation500 W--68 W48 W
Qg Gate Charge78 nC--150 nC30 nC
Rds on Drain Source Resistance3 mOhms--4.8 mOhms21 mOhms, 21 mOhms
Transistor PolarityN-Channel--P-ChannelN-Channel
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