Vishay SQJ180EP-T1_GE3 MOSFETs
MOSFETs N-CHANNEL 80-V (D-S) 175C MOSFET
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQJ180EP-T1_GE3
Detailed Description
MOSFETs N-CHANNEL 80-V (D-S) 175C MOSFET
Package
Reel
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Vishay SQJ180EP-T1_GE3 MOSFETs technical specifications.
General
Series
SQJ
RoHS
RoHS Compliant By Exemption
Number of Channels
1 Channel
Package / Case
Reel
Packaging
Reel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 175°C
Channel Mode
Enhancement
ID Continuous Drain Current
248 A
Pd Power Dissipation
500 W
Alternate Parts Comparison (SQJ180EP-T1_GE3 vs SQJ850EP-T1_GE3 vs SQJ411EP-T1_GE3 vs SQJ974EP-T1_GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | SQJ | Automotive, AEC-Q101, TrenchFET® | SQJ | SQJ |
| Package / Case | Reel | Tape and Reel | PowerPAK-SO-8-4 | Tape and Reel |
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | - 55°C ~ + 175°C | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Number of Channels | 1 Channel | 1 | 1 Channel | 2 Channel |
| RoHS | RoHS Compliant By Exemption | Compliant | Compliant | Compliant |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Technology | Si | MOSFET (Metal Oxide) | Si | Si |
| Pd Power Dissipation | 500 W | -- | 68 W | 48 W |
| Qg Gate Charge | 78 nC | -- | 150 nC | 30 nC |
| Rds on Drain Source Resistance | 3 mOhms | -- | 4.8 mOhms | 21 mOhms, 21 mOhms |
| Transistor Polarity | N-Channel | -- | P-Channel | N-Channel |
| Action |
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