Vishay SQD50P08-28_GE3 MOSFETs
MOSFET P-CH 80V 48A TO252AA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQD50P08-28_GE3
Base Model
Detailed Description
MOSFET P-CH 80V 48A TO252AA
Package
TO-252AA
Lifecycle Status
Active
Datasheet
SQD50P08-28_GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQD50P08-28_GE3 MOSFETs technical specifications.
General
Series
SQ
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
80 V
ID Continuous Drain Current
48 A
Rds on Drain Source Resistance
23 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SQD50P08-28_GE3 vs SQD50P04-13L_T4GE3 vs SQD50P06-15L_GE3 vs SQD50P04-13L_GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | SMD/SMT | Surface Mount |
| RoHS | Yes | Compliant with Exemption | Yes | ROHS3 Compliant |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Series | SQ | -- | SQ | TrenchFET® |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Fall Time | 16 ns | -- | 39 ns | 16 ns |
| Pd Power Dissipation | 136 W | -- | 136 W | 136 W |
| Qg Gate Charge | 145 nC | -- | 150 nC | 80 nC |
| Qualification | AEC-Q101 | -- | AEC-Q101 | AEC-Q101 |
| Rds on Drain Source Resistance | 23 mOhms | -- | 13.5 mOhms | 10 mOhms |
| Rise Time | 11 ns | -- | 12 ns | 12 ns |
| Action |
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